Fig. 2: Temperature-dependent thermoelectric properties.
From: High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K
Measured a effective thermal conductivity, κeff, b effective electrical conductivity, σeff, and c Seebeck coefficient, S, of various porous SiNWs as a function of temperature. For the legend, the first number represents SiNW porosity, the middle one is boron doping concentration (p) measured using secondary ion mass spectrometry (SIMS, see Methods), and the last number is SiNW diameter. Note κeff and σeff are extracted based on nanowire diameter without normalizing with porosity. d Calculated thermoelectric figure of merit ZT for the three samples with ϕ = 46% and p = 2.2 × 1020 cm−3 (152, 171, 184 nm) with the highest ZT in this work, where the previously measured ZT results of single rough SiNW8,13, thin SiNW array9, polycrystalline Si nanotube mesh20, holey Si19, nanobulk Si21,22,23,24,25,26 and bulk Si (8.1 × 1019 cm−3 boron-doped)36 are plotted for comparison. The error bars represent ZT uncertainties calculated based on measurement errors in κ, σ, and S (see Supplementary Note 5).
