Fig. 3: Comparison of a PM-OPD and an equivalent pin-photodiode.

a JV characteristics in dark and under 100 mW cm⁻² illumination of a pin-photodiode and of a PM-OPD. b The EQE measured at different voltages is fitted with polynomial function from which the detectivity is predicted. The total noise is calculated from the shot and thermal noise, which are obtained from the dark current and the shunt resistance at room temperature, respectively. The PM-OPD shows a maximum D^* of 2.2 × 10¹² Jones around −2.5 V, which is higher than D^* of the equivalent pin-photodiode over the entire range measured, besides the high dark current at high reverse bias. The pin-photodiode comprises the same structure shown in Fig. 1c, except for the ETL, where instead of HATNA-Cl₆, BPhen (8 nm) is used, see Supplementary Fig. 1b.