Fig. 3: Hall effect of MnBi.
From: Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi
a–d for H//a and I//c, and e–f for H//c and I//a. a Hall effect between 2 and 40 K with typical two-charge-carrier features. The inset shows the magnetization and fits using a two-charge-carrier model. The field-dependent AHE, proportional to the magnetization, is saturated at approximately 0.5 T shown by dashed lines. In contrast, the Hall resistivity slope still changes under a magnetic field greater than 4 T due to the different charge carriers. b, Mobility and charge carrier density (inset) at different temperatures. c, e Hall resistivity at different temperatures. d, f Anomalous Hall resistivity versus the longitudinal resistivity square. The slopes of these curves are the intrinsic anomalous Hall conductivity. The error bar due to the uncertainty of the geometry of the sample is estimated as 10%.
