Fig. 1: Process schematic for single-crystal rutile oxide nanomembranes (NM) on silicon.

a Schematic of an epitaxial TiO2/VO2 heterostructure on TiO2 host substrate. b The VO2 layer is dissolved in H2O2 to release the top TiO2 film with the mechanical supporting layer. c The freestanding TiO2 NM is transferred onto the desired substrates (e.g., silicon). d By removing the rigid supporting layer, single-crystalline rutile oxide NM is heterogeneously integrated into a silicon substrate. e Epitaxial VO2 film with steep phase transition is grown on the TiO2-NM-templated Si substrates.