Fig. 5: Single-crystalline VO₂ films with steep phase transition on TiO₂-NM-templated Si substrate.

a Temperature-dependent resistivity modulation near T_MIT in 10-nm-thick VO₂ films on TiO₂ NM/SiO₂/Si (red lines) and 50-nm-thick VO₂ films on SiO₂/Si (black lines). b Comparison of various metal-insulator transition properties (d(log₁₀(\(\rho\)))/dT, T_h, T_c, \(\triangle H\), \(\triangle {T}_{{{{\mathrm{h}}}}}\), \(\triangle {T}_{{{{\mathrm{c}}}}}\)) between 10-nm-thick VO₂ films on TiO₂ NM/SiO₂/Si (red lines) and 50-nm-thick VO₂ films on SiO₂/Si (black lines). Note that the transition width and sharpness, as well as the resistivity ratio, were substantially improved in VO₂ films with TiO₂ NM, compared to those without TiO₂ NM. c Benchmark of resistivity ratio \(\Delta \rho /\rho =({\rho }_{{T}_{{{{{\mathrm{MIT}}}}}}-15K}-{\rho }_{{T}_{{{{{\mathrm{MIT}}}}}}+15K})/{\rho }_{{T}_{{{{{\mathrm{MIT}}}}}}+15K}\) for VO₂ films on Si substrates across the MIT. For a direct comparison, all films were grown on oxide-coated Si substrates using various growth techniques: (sputtering (black square), ALD (green circle), PLD (blue diamond), and sol-gel (orange hexagon)) reported in the previous literature (Supplementary Table 1). While deteriorated \(\triangle \rho /\rho\) was observed in VO₂ films directly grown on Si due to the polycrystallinity of the films and the formation of a defective interfacial layer, epitaxial growth of VO₂ films (5 and 10 nm) guided by transferred TiO₂ NM enables integration of correlated oxides on silicon substrates with the highest modulation of resistivity ratio across the metal-insulator transition (red stars).