Fig. 5: Several phenomena and reflection-less devices enabled by GAMs.

a Schematic diagram of an invisible dielectric object by covering it with GAM. b, c Simulated electric field distributions of a diamond dielectric object covered with (b) and without (c) the GAM. d Schematic diagram of reflection-less negative refraction on a dielectric surface. e, f Simulated electric field distributions of a dielectric surface with (e) and without (f) the GAM. g Schematic diagram of a reflection-less flat axicon on a dielectric surface. h, i Simulated distributions of intensity for the designed reflection-less flat axicon under illumination of TE (h) and TM (i) polarized incident waves. The solid curves in (h) and (i) depict the normalized intensity along the bottom boundary of (h) and (i), respectively. White arrows depict the incident waves. Relative permittivity of the dielectrics is 4.4. GAMs in b and e are composed of the meta-atoms shown in Fig.2. Details of GAMs in h and i are shown in Supplementary Information.