Fig. 3: Multiple Andreev reflections and supercurrent in InSb/Al Josephson junctions.
From: Shadow-wall lithography of ballistic superconductor–semiconductor quantum devices
a Differential resistance, R, as a function of ISD (upward sweep direction) and T for device 1 at VBG = 13.65 V. The switching current reaches a maximum of ~ 90 nA at T = 30 mK and persists up to 1.8 K. The peaks at ISD > Isw arise from quasiparticle transport via multiple Andreev reflections. b Conductance line traces (red) versus source–drain voltage for device 1 at VBG = 5.1 V (top) and for device 2 at VBG = 3.0 V (bottom). The theoretical fits (green) yield the transmissions, Tn, of the one-dimensional subbands with index n: T1 = 0.91, T2 = 0.17 (top) and T1 = 0.93, T2 = 0.71, T3 = 0.01 (bottom). c Differential conductance, G, as a function of VSD and magnetic field, B∥, which is oriented along the nanowire, for device 2 at VBG = −0.9 V.
