Fig. 5: Temperature dependence of the phase-slip memory. | Nature Communications

Fig. 5: Temperature dependence of the phase-slip memory.

From: Preliminary demonstration of a persistent Josephson phase-slip memory cell with topological protection

Fig. 5

a Current modulation I(Φ) for several bath temperatures (T) at V = 300 μV. The hysteresis loop narrows and fades out by increasing the temperature since the superconducting nanowire approaches the short-junction limit at high T. Inset: blow-up of the I(Φ) characteristics around Φ0/2 at 1.1 K. Forward (purple) and backward (green) traces highlight the presence of hysteresis. b Temperature dependence of δΦ measured at V = 300 μV. δΦ monotonically decreases with temperature. c ζ vs T for selected values of V. ζ drops with temperature, and by increasing V. Black lines in panels b and c are guides for the eye.

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