Fig. 3: Conductance tuning results.
a Forming and high-precision tuning to 20 µS, 10 µS, 100 µS, and 8 µS target conductances of a crossbar device, with 1% relative precision. The inset shows the applied sequence of pulses during conductance tuning. Pulse sequences parameters are similar to those of panel c, except for the utilized 50 mV incremental step. b Example of device tuning with a 1% relative error to different conductance levels equally spaced from 3 µS to 45 µS. c–e Programming Einstein image to the 64 × 64 crossbar array with a 5% relative error. c Tuning statistics. Inset shows details of the write-verify pulse sequence. d The target device conductances in the range of 10 µS to 100 µS corresponding to the gray-scale quantized image and (e) their actual measured values after completing automated tuning. The relative tuning error is defined as 100% × |Itarget(0.25 V) − Iactual(0.25 V) | /Itarget(0.25 V). All conductances are specified at 0.25 V. Einstein image copyright by Yousuf Karsh.
