Fig. 1: Device geometry and working principle.
From: Vacuum-field-induced THz transport gap in a carbon nanotube quantum dot
a Cartoon picture of the process leading to the gap. At low bias with respect to the cavity frequency fcav, the light and matter hybridize ultra-strongly, leading to a blockade of the current even though the cavity is in its vacuum state. b Cartoon picture of the process leading to the gap. At high bias with respect to the cavity frequency fcav, the light and matter are not hybridized anymore and the current is de-blocked via photon emission processes (n = 1 process sketched here). The process a. illustrates the appearance of a band gap induced by the vacuum fluctuation of the cavity. c SEM picture of the devices: the THz cavity is capacitively coupled to the QD in the CNT. d Close-up of a similar device showing contacts and top gates on the CNT. The gate layout is slightly different than for panel c. I is the current flowing through the device.
