Fig. 2: Electronic structure of 1uc FeSe/LFO/STO.
From: High temperature superconductivity at FeSe/LaFeO3 interface
a Schematic illustration of the heterostructure. b Photoemission intensity map for 1uc FeSe/LFO/STO integrated over (EF−35 meV, EF+15 meV). Data were measured at 6K with full photon flux of the Helium lamp, which shows a photoemission charging effect of ~10 meV (see Supplementary Fig. 5). With the integration energy window of (EF−35 meV, EF+15 meV), it can represent the Fermi surface map under no charging effect. c, d Photoemission intensity (c), second derivatives of the photoemission intensity with respect to energy (d) along cut #1 in b. e, f Same as c, d, but along cut #2 in b. The dashed curves trace the band dispersions. g Energy distribution curves (EDCs) across Γ along cut #1. h Same as panel g, but across M along cut #2. Data in b–h were measured at 6K with 1/8 of the total photon flux of the Helium lamp, which eliminates the photoemission charging effect (see Supplementary Note 3).
