Fig. 1: Optical properties of nanoantennas and single-photon emitters in monolayer WSe2.
a, b Top panel: schematics of monolayer WSe2 on top of GaP nanoantennas (a) and SiO2 nanopillar (b). Lower panel: calculated relative intensity of the electric field in the scattered wave (E) over that in the incident wave (E0). Results are shown for (a) a GaP dimer nano-antenna (r = 150 nm, h = 200 nm, gap = 50 nm) and (b) SiO2 nanopillar (r = 150 nm, h = 100 nm). The calculated intensity is shown for the plane at the top of each structure. Scale bar: 150 nm. c–e The calculated Purcell enhancement factor (c), excitation rate (d), and light collection efficiency (e) for a dipole emitter placed at the position of the highest field enhancement shown in (a) and (b) of the GaP dimer nanoantennas (red) and SiO2 nanopillars (dark blue) relative to the same parameters for this dipole in a vacuum. See further details in “Methods “and Supplementary Note I. f A T = 4 K PL spectrum of a WSe2 SPE on a GaP nano-antenna (r = 250 nm, h = 200 nm, gap = 50 nm), excited` with a 638 nm pulsed laser with 20 MHz repetition rate and an average power of 15 nW. Inset: map of the integrated PL intensity of this monolayer (T = 4 K). g Second-order photon correlation curve for the PL signal in (f).
