Fig. 3: PL dynamics in SPEs coupled to GaP nanoantennas.
a Schematic showing the conduction (CB) and valence band (VB) behavior as a function of strain (shown in the top panel with a red line), and a single exciton trapping from the reservoir in 2D WSe2 into a strain-induced potential minimum, giving rise to the nonclassical light red-shifted from the emission in the unstrained monolayer. b Time-integrated PL spectrum of the strain-induced WSe2 SPE with a QE of 86% and saturation power of 57 nW for 80 MHz repetition rate, for which the data in (c), (e), and (f) are presented. c PL decay curves for the SPE in (b) measured at different laser powers. The instrument response function (IRF) is shown in gray. Inset: zoom-in of the PL traces also showing fitting with the analytical model discussed in Supplementary Note VII. The PL traces in the inset are plotted on a linear scale and shifted vertically for display purposes. d Schematic of the three-level system representing the dark exciton reservoir (nX), the exciton in the SPE (n1) and the ground level (n0), and the processes describing radiative and nonradiative decay of nX and n1 populations. See text for more details. e, f PL decay (e) and PL rise (f) times, as a function of the excitation power, obtained from the data fitting in Fig. 3c. For 3000 nW, τrise approaches the instrument resolution (gray dashed line). The error bars are calculated from the standard deviation of the fit values.
