Fig. 1: Current-induced manipulation of the exchange bias in an IrMn/NiFe structure.

a Left: Exchange-biased IrMn/NiFe structure, where the blue and red arrows represent the magnetization (m) of NiFe and IrMn, respectively, and B_EB is the exchange bias field. Middle: The Hall bar device used for electrical measurements. The Hall resistance (R_H) is measured after applying an in-plane current pulse J_P. Right: Schematics of the current-induced exchange bias switching, where the magnetization direction of the IrMn/NiFe bilayer (φ_m) is modulated by the spin current with spin polarization (σ). b Hysteresis loop of IrMn (5 nm)/NiFe (4 nm) structure measured with magnetic fields along the x-axis (solid blue) and y-axis (open red). c R_H versus azimuthal angle of a magnetic field (φ_B) of 100 mT. d The R_H versus J_P curves, where the arrows denote the sweeping direction of J_P. e, R_H as a function of a magnetic field along x-axis (B_x). R_H is initially set to ±0.14 by an J_P of \(\mp\)8.3 × 10¹¹ A/m², represented by the red and blue symbols. Open squares (lines) refer to increasing (decreasing) B_x. The inset illustrates the magnetization changes by B_x.