Fig. 3: Crystal orientation and phase distribution.

a Evolution of GIWAXS patterns with various penetration depths and ISC times. b Mapping and the corresponding c line-cut profiles of Cort in PEA2MA3Pb4I13 thin films as a function of ISC time and depth. The black(red) dashed box represents the low(high) Cort region, respectively. d Mapping and e the corresponding line-cut profiles of n values in PEA2MA3Pb4I13 thin films as a function of ISC time and depth. The inset illustrates the ethcing and probing processes on the PEDOT:PSS coated silicon substrates during TOF-SIMS. The red dashed curve and vertical line in d separate the whole pane into n < 4, n = 4 and quasi-2D areas and the red dashed box marks the quasi-3D region.