Fig. 4: Crystallization comparison of thin-films fabricated with ISC and SC methods. | Nature Communications

Fig. 4: Crystallization comparison of thin-films fabricated with ISC and SC methods.

From: Implementing an intermittent spin-coating strategy to enable bottom-up crystallization in layered halide perovskites

Fig. 4

In situ GIWAXS mapping versus time and q vector during film formation under a, b ISC-8s and c, d SC treatments along with the corresponding line-cuts at ~10 nm−1 collected from the e surface (0.1°) and f bulk area (0.4°). Crystallization illustrations of g SC and h ISC method. Note t1 (t3) and t2 (t4) represent the time required to reach the critical concentration for the interface and surface, respectively, in SC (ISC) method. Given the fast crystal growth, the upward crystallization is already completed before the surface reaches t4 in the ISC method.

Back to article page