Fig. 1: Raman detection of interfacial modes at the Si-Ge interface.
From: Experimental observation of localized interfacial phonon modes
a Schematic diagram of Raman measurements on Sample 1 and its HAADF-STEM image showing a high-quality Si-Ge interface. b Raman spectra of Sample 1, a Ge wafer, and a Si wafer. Two objectives (×50 and ×100) were used to perform the Raman measurements on Sample 1 and the measurement details can be found in the Methods section. A distinct Raman peak around 11.3–12.2 THz from Sample 1 is not seen in bulk Ge or Si wafers, which is attributed to the interfacial modes.
