Fig. 2: Stretchability of polymer curvilinear microstructures.
From: Wafer-scale integration of stretchable semiconducting polymer microstructures via capillary gradient
a Scheme of the FET device based on curvilinear polymers microstructures. The electronic performance of curvilinear polymer microstructures was measured by the soft contact lamination method. b Finite element analysis of the deformable curvilinear P3HT microstructure arrays on SEBS substrate in the unstretched state (εxy = 0%) and under 100% strain parallel (εx = 100%) and perpendicular (εy = 100%) with the charge transport direction, respectively. Chemical structures of two typical P-type polymers c P3HT and e PDVT-10, and an N-type polymer (g) P(NDI2OD-T2). d, f, h Optical images of the deformable curvilinear microstructures based on polymers of (c), (e), and (g) on SEBS substrate in the unstretched state (left) and at 100% strain parallel (middle) and perpendicular (right) to the charge transport direction, respectively. i–n Transfer curves and the statistical diagrams of the on-current and mobility of these polymer OFETs at 0% strain and 100% strain parallel and perpendicular to the charge transport direction, respectively. Solid and dashed lines in (i)–(k) are IDS–VGS and |IDS|1/2–VGS curves of devices, respectively. The mobilities in (l)–(n) represent average values are obtained from five devices. All scale bars: 10 μm.
