Fig. 5: Photodiode performance of a Pb_0.5Sn_0.5I₃ perovskite and with a PTAA:poly-TPD EBL.

a Schematic device structure. b J − V characteristic in dark and under NIR light (940 nm); the current density is limited at high forward bias, i.e., outside the typical operating region of the photodiode, as result of the energetic hole injection barrier; solid circles are current density values derived from constant voltage measurements over time at discrete biases (Supplementary Fig. 15a). c Linearity plot measured at −0.5 V showing J_ph at different photon fluxes under NIR radiation (940 nm). d Normalized transient photocurrent response under low light intensity (540 nm, 0.8 mW cm⁻²) upon square light pulses (50 μs duration) and single peak pulses (6 ns, inset), exhibiting a rise (and fall) time, i.e., time for response vary from 10% (90%) to 90% (10%), lower than 1 μs. e Noise current vs. frequency at −0.2 and −0.5 V. f Detectivity of the photodiode at different wavelengths under reverse bias (−0.5 V).