Fig. 1: Schematics of the design of a huge strain gradient via GB engineering.
From: Engineering of atomic-scale flexoelectricity at grain boundaries
a Schematic of inhomogeneous deformation of the unit cell in a GB (flexoelectric coefficient f11 ≠ 0), producing a net dipole moment due to flexoelectricity (Pflexo). b Expected distribution of the strain gradient for different GB angles. The red dots represent experimental data from LAO and STO GBs. The error bar is the standard derivation.
