Fig. 1: Morphology and structural characterization of MoS1.5Te0.5@C nanocables.

a Schematic illustration for the synthesis process of the MoS1.5Te0.5@C nanocables; b, c SEM images and d, e TEM images of the MoS1.5Te0.5@C nanocables. f High-resolution TEM image and g the magnified high-resolution STEM image for MoS1.5Te0.5@C nanocables (left) and the intensity profile of the colored areas indicated in the image (right). h, i HAADF-STEM and elemental mapping images of the MoS1.5Te0.5@C nanocables. The inset of panels (f) is the intensity profile along the lines taken from the lattice fringes based on HRTEM images, and the inset in (i) is line scan curves.