Fig. 1: Schematic illustration of piezoresistive BBP–MX–AG.

a Illustration of the structure of BBP–MX–AG and the shrinking process of the multilevel cellular wall with bottlebrush-like PGPDMS crosslinked MXene nanochannels under pressure. b Equivalent circuit diagram of the piezoresistive BBP–MX–AG sensor. RI is the resistance change caused by shrinkage of the nanochannels inside the cellular walls, and RE is the resistance change induced by the bending and bucking of the cellular walls. c MD simulations demonstrating the atomic configurations of PGPDMS between the MXene nanochannels under compressive strain. The atoms are colored based on their atomic strain.