Fig. 5: Mechanisms of PTE THz emissions and the comparison with semiconductor THz sources. | Nature Communications

Fig. 5: Mechanisms of PTE THz emissions and the comparison with semiconductor THz sources.

From: Ultrafast photothermoelectric effect in Dirac semimetallic Cd3As2 revealed by terahertz emission

Fig. 5

Schematics of (a) transverse Seebeck effect and (b) Nernst effect, where JS is the Seebeck current, JS// is the in-plane component, JS⊥ and JN denote the out-of-plane component and the Nernst current respectively, which are composed by both the electron current and hole current. Comparison of the optimized THz emission from Cd3As2 nano-films with the (c) ZnTe (110) and (d) InSb (111) wafers with thicknesses of 0.5 mm, respectively. Insets in panels (c, d): the corresponding setups.

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