Fig. 3: Atomic-scale observation of the LBD contact in MoS2.
From: Bridging the gap between atomically thin semiconductors and metal leads
a Top-view optical image of a typical 3L-MoS2 FET. The dash-dot line indicates the cutting position in the source, from which a cross-section membrane as illustrated in the schematic (b) was extracted using the focused ion beam (FIB) method. c The low-magnification ADF image of the contact region. The area in the red-dash rectangle is zoomed in as (d). d Atomic-resolution ADF image of the MoS2-LBD-metal junction observed along the MoS2 zig-zag direction. The first layer of MoS2 is analyzed in (e) with the corresponding atomic model shown below. The overlaid blue, red and green dashed lines highlight the lattices of hexagonal MoS2, octahedral MoS2 and metal lead, respectively. f The Mo–Mo bond-length comparison (E equal, S short, L long) between the experimental measurement and the simulated standard structure. The red dashed lines mark the positions of Mo atomic columns in the experimental data while the black dashed lines indicate the S-Mo-S unit from which the distortion starts.
