Fig. 1: An overview of the key technologies used in this study to achieve an emissive-type RGB micro-LED array with over 1000-PPI resolution.
From: Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
a Wafer-scale GaN epilayer was transferred using a low temperature bonding process. b The epilayer was bonded with lithographic precision in alignment for future CMOS integration. c Surface energy was modified with self-assembled monolayers for dry patterning of QDs. d A double layer elastomeric mask was used to dry pattern the QDs without using any solvent. e QDs were used for spectrally pure color conversion.
