Fig. 2: Fabrication of an epitaxial layer-transferred μ-LED and measurement results.
From: Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
a Schematic of wafer-scale epitaxial layer transfer and the μ-LED fabrication process. A cross-sectional SEM image of bonded eutectic metal alloys (without any voids) is shown on the top left. Schematic images and optical images of the substrate removal process is shown in top right. FE-SEM images of 5 μm-pixel μ-LED mesa structures and an optical image of LGD letter patterns with individual pixels shown are on the lower panel. b Collective current–voltage characteristics of 20,000-pixel μ-LEDs with varying metal mesh densities. c Light output power densities of μ-LED structures as a function of input power.
