Fig. 3: A mechanism of the photovoltage memory effect in a Si/CoOx/KBi(aq)/MnOx Faradaic junction device.
From: Photovoltage memory effect in a portable Faradaic junction solar rechargeable device
a OCPs of a Si/CoOx photoelectrode and a MnOx counter electrode under illumination and in the dark. The OCPs were measured under disconnected and connected modes. Light source: 1 Sun of simulated solar illumination by a Xe lamp with AM 1.5 G filter (100 mW cm−2), electrolyte: KBi aqueous solution (0.2 M KOH and 0.4 M H3BO3) with pH = 9. b Energy band diagrams of Si/CoOx/KBi(aq)/MnOx at different working stages. EVB and ECB are the valence band and conduction band of a semiconductor, respectively; EFn and EFp represent the quasi-Fermi levels of electrons and holes, respectively; VR is a residue voltage between a photoelectrode and a counter electrode; Voc represents a photovoltage and VD represents a dark output voltage.
