Fig. 2: Characterization of spin-cast MoS2 thin film.
From: Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing
a Optical image of the wafer-scale MoS2 thin film. b optical image of patterned MoS2 thin film and corresponding Raman mapping of \({E}_{2{{\mbox{g}}}}^{1}\) mode (c) and A1g mode (d). The scale bar in (b) is 10 μm. e Raman spectra collected on random spots from a. f SEM image of the MoS2 thin film. The wrinkles are the edges of MoS2 nanosheets. g Atomic resolution high-angle annular dark field (HAADF) STEM image of MoS2 nanosheets (false-colored). h Cross-sectional HAADF-STEM image and i. corresponding elemental mapping of MoS2 thin film. j The cross-sectional ADF-STEM image taken at the junction region of the MoS2 thin film. k EELS spectra of region A and B taken from j.
