Fig. 3: Electrical performance characterization of the MoS2 memristors.
From: Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing
a–c 200 representative I-V curves of MoS2 memristors made from suspensions A, B, and C, respectively. To be noted, the electrode size is 5 × 5 μm. d Calculated VS diffusion barrier energy versus flake size. I-V characteristics of MoS2 memristor measured at different temperatures in LRS (e) and HRS (f). Schottky emission fitting for LRS (g) and HRS state (h). Schematic diagrams of the set (i)/reset (j) process and corresponding interface band alignment. The light blue balls represent VS.
