Fig. 3: The working mechanism of MVOFET and AgNWs-based VOFET.
From: MXene based saturation organic vertical photoelectric transistors with low subthreshold swing
a The output characteristic of MVOFET under 313 and 353 K. b ln(ISAT/T2) vs. q/KBT plots at various gate voltages. c The variation of Schottky height under different gate voltage. d The output characteristic of AgNWs-based VOFET under 313 and 353 K. e ln(ISAT/T2) vs. q/KBT plots at various gate voltages of AgNWs-based VOFET. f The variation of Schottky height under different gate voltage of AgNWs-based VOFET. g The microscope image of stacked MXene flakes without perforation. h Ten cycles of transfer curves of MVOFET without perforation. i The bias stress ability of the device, j UPS measurement of MXene film. k Energy-band diagram of MVOFET and AgNWs-based VOFET. The error bars in c, f represent the standard deviation which are derived from five MVOFETs and five AgNWs-based VOFETs.
