Fig. 1: Characterization of the Turing structures.
From: Homogeneous solution assembled Turing structures with near zero strain semi-coherence interface
a Interface strain due to lattice mismatch. b Turing structures. c Scanning electron microscopy (SEM) image of the Turing structure for the Turing interface film (Zn: Fe=1:3) employing iron (III) 2,4-pentanedionate (Fe[C5H7O2]3). d False-colored high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image of the Turing interface film in c. Purple represents α-Fe2O3, and green represents ZnFe2O4 by crystal plane analysis. e SEM image of the conventional dual-phase interface film (Zn: Fe = 1:3) (dual phases coexist, but there is no reaction diffusion at the interface). f SEM image of the non-Turing dual-phase interface film (Zn: Fe = 1:3) employing ferric nitrate (Fe(NO3)3) (dual phases coexist, but the gap in reaction diffusion kinetics is small). g Three-dimensional APT volume (20 × 20 × 80 nm3) of the center of the Turing interface film (Zn: Fe = 1:3) and one-dimensional concentration profile taken along the arrow. h Ratio of the separation efficiencies of the Turing interface film (η1) and the conventional dual-phase interface film (η2) and non-Turing dual-phase interface film (η3). i Assuming that the kinetic pathways depend on competing activation (Fe[C5H7O2]3) (slow diffusion of an activator, coordination state) and inhibition (Zn2+) (fast diffusion of an inhibitor, ionic state). Scale bars: c 100 nm; d 20 nm; e 100 nm; f 200 nm.
