Fig. 6: Enhancement mechanism of the Turing interface film.
From: Homogeneous solution assembled Turing structures with near zero strain semi-coherence interface
a Schematic of the fundamental processes in the Turing interface film. Photon absorption and formation of the carriers and carrier separation at the interface. b Schematic of the fundamental processes in the conventional dual-phase interface film. Photon absorption and formation of the carriers and carrier separation at the interface. c Schematic of the fundamental processes in the non-Turing dual-phase interface film. Photon absorption and formation of the carriers and carrier separation at the interface. d Photocurrent density versus applied potential curves under 1 sun (AM 1.5 G, 100 mW cm−2). e OCP curves for ZnFe2O4, the Turing interface film (Zn: Fe = 1:3), the Turing interface film (Zn: Fe = 1:4) and α-Fe2O3 films. The blue region represents the time in which the samples were under light illumination, and the pink region represents the time after the illumination was turned off. f OCP-derived carrier lifetimes. g Transient photovoltage responses (TPV). h VCPD image under 405 nm light irradiation of the Turing interface film (Zn: Fe = 1:3). i Current images (3D) of the Turing interface film (Zn: Fe = 1:3) overlaid under 405 nm light irradiation (1 V bias).
