Fig. 3: Optoelectrical characteristics of UV sensors on a microfibre. | Nature Communications

Fig. 3: Optoelectrical characteristics of UV sensors on a microfibre.

From: Integration of multiple electronic components on a microfibre towards an emerging electronic textile platform

Fig. 3: Optoelectrical characteristics of UV sensors on a microfibre.

A Schematics and a photograph of the optoelectrical measurement when outside of the fibre device is irradiated by 470 nm UV-LED light. B Transfer curves of the IGZO-based phototransistor in the dark and under UV light exposure. C Time-dependent photoresponse at different gate voltages under pulsed illumination with UV light. D Schematics of the optoelectrical measurement when the inside of the fibre device is irradiated by 404 nm laser light. E Transfer characteristics of the phototransistor in the dark and during exposure to UV light in the fibre core. F Transient photocurrent of the IGZO device with different laser powers of 4.2 V, 4.6 V, and 5.0 V.

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