Fig. 5: Integrated electronic fibre under various bending conditions and embedding in a fabric.
Schematic illustrations of the integrated fibre device on PET substrate (left) and ID–VG characteristics (right) of the IGZO FETs under A concave and B convex bending conditions. The mechanical strain (ε) is calculated using the bending radius (R). The insets show photographs of the flexible fibre device measured during bending. Change of on-current states, field-effect mobilities, and threshold voltages of the IGZO FETs on the fibre C as a function of mechanical strain with forwards and backwards bending, and D during repeated bending test up to 10,000 cycles at the bending radius of 11.7 mm. E Photograph of the electronic fibre embedded in a fabric and sewed inside the collar of a shirt. F On-current states, field-effect mobilities, and threshold voltages of the IGZO FETs on the fibre at pristine, sewed, and after wearing for 10 days. G Photocurrent of the photosensor and thermoelectric voltage of TCs on the fibre at pristine, sewed, and after wearing for 10 days. H Electrical characteristics of the encapsulated IGZO FET on the electronic fibre before and after washing (detergent and NaCl solution).
