Fig. 5: Delocalisation of impurity band and high thermoelectric performance driven by antisite disorder.
From: Anderson transition in stoichiometric Fe2VAl: high thermoelectric performance from impurity bands
a Hall mobility versus carrier concentration at T = 4 K. b Thermopower versus carrier concentration (Pisarenko plot) for disorder-tuned Fe2VAl and conventionally doped Fe2VAl1−xSix. c Peak values of the thermopower and temperature of the maximum of the resistivity versus quenching temperature. Dashed and solid lines are guides to the eye. d Power factor of as-cast and 1380 ∘C-quenched stoichiometric Fe2VAl compared to the optimum power factors obtained by extrinsic n-type doping on the Al, V and Fe sites (Fe2VAl1−xSix45, Fe2VAl1−xSbx46, Fe2V1−xWxAl47, (Fe1−xCox)2VAl48, 49) as well as co-doping Fe2V0.95Ta0.05Al0.9Si0.150 and off-stoichiometry Fe1.98V1.02Al0.9Si0.151. For comparison, the highest n-type power factor reported for the state-of-the-art thermoelectric Bi2Te3-system52 is plotted as dashed lines.
