Fig. 1: Epitaxy and exfoliation of GaSb on graphene-terminated GaSb (001).
From: Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
a–d GaSb epitaxy on a GaSb (001) substrate that is half covered with graphene. a Reflection high energy electron diffraction (RHEED) patterns along a \([1\bar{1}0]\) azimuth, tracking direct epitaxy on the exposed GaSb region. RHEED after the oxide off step shows a bright three-dimensional pattern. After 75 nm of film growth, an atomically smooth smooth ring of spots RHEED pattern is recovered. b RHEED patterns tracking oxide desorption and growth on the graphene-terminated half of the substrate. c Schematic of the heterostructure. (d) X-ray diffraction pattern of the GaSb film grown on the graphene-terminated side of GaSb (001). e–g GaSb membrane exfoliation using a Ni stressor layer. e SEM image of the under side of the exfoliated GaSb membrane. The inset schematic illustrates the exfoliation. f SEM images of the substrate after exfoliation. g X-ray diffraction patterns of the 004 reflection for the exfoliated GaSb membrane (blue) and the GaSb substrate (black). Insert: example photo of the substrate (left) and GaSb membrane (right) after exfoliation. Membrane dimensions are approximately 10 mm by 6 mm.
