Fig. 3: Pinholes created by native oxide desorption.
From: Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
a SEM images and RHEED patterns tracking the native oxide desorption and creation of large 300 nm diameter holes. b AFM height images. Pinholes with diameter ~10 nm appear at the onset of native oxide desorption, 450 °C. c AFM phase contrast images. The phase contrast arises from differences in elastic modulus between the graphene and the holes with exposed GaSb. d Schematic of the oxide desorption process leading to the creation of holes with different sizes. Red circles represent oxides. e Raman spectra at various stages during oxide desorption. Strong D peak activation coincides with the appearance of large holes after annealing at 540 °C. f AFM height and phase line profiles extracted from the 450 °C sample. The corresponding line cut is marked by the blue line in the AFM images.
