Fig. 7: GaAs selectivity on patterned graphene/Ge.
From: Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
The graphene was grown directly on the Ge (001) by CVD, thus avoiding the damage and interfacial oxides typically present for graphene layer transfers. We use photolithography and an oxygen plasma etch to define 10 micron wide stripes of alternating graphene and exposed Ge substrate. GaAs films were then grown on the patterned graphene substrate by MBE. a SEM image of GaAs nucleation on patterned graphene on a Ge (001) substrate. We observe selective nucleation of GaAs (light color) on the exposed Ge regions of the substrate, and no GaAs nucleation on the graphene. b Cartoon of the sample. c Raman spectra on the graphene masked region (black curves) and on the GaAs nucleation region (blue). Representative areas for these spectra are marked by the circles in the SEM image (a).
