Fig. 2: Performance metrics of the macroscale BLAST devices. | Nature Communications

Fig. 2: Performance metrics of the macroscale BLAST devices.

From: Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing

Fig. 2

a Conductance per pulse number (20 negative and 20 positive pulses). The black line depicts the mean over 50 measurements, and the blue cloud represents the standard deviation. Nonlinearity values for potentiation and depression were found to be δP = 0.89 and δD = 0.76. Average write noise was found to be σwrite = 1.97%. b Stepwise increase in device conductance upon a series of 100 consecutive pulses (each pre-synaptic pulse is 10 µA, 100 ms). The inset shows the state density distribution of 20 states, which do not overlap, indicating extremely low write noise at 0.029% of the dynamic range. c Color plot of conductance change intensity with varied pre-synaptic pulse amplitude and duration. Supplementary Fig. 8 contains the log-log version of the plot that better represents distribution at lower pulse amplitudes and durations. d Absolute change in conductance (∆G) with varied pulse amplitude (pulse duration is constant, 10 ms). e Absolute change in conductance (∆G) with varied pulse duration (pulse amplitude is constant, 1 µA). f Percentage change from initial conductance normalized by energy dissipated as a function of channel area. The black dotted line depicts a line of linear fit with a correlation coefficient of R = −0.93.

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