Fig. 3: Endurance and retention characteristics of mBLAST. | Nature Communications

Fig. 3: Endurance and retention characteristics of mBLAST.

From: Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing

Fig. 3

a Endurance ramp testing using 20 positive and negative pulses per ramp of an mBLAST at 105, 106, and 107 pulses. b Collapsed ramps averaged across 2 × 105 cycles prior to the cycle number indicated in the legend. The colored cloud corresponds to the write noise of each snapshot. c Nonlinearity parameter δ calculated as a function of the number of cycles. The orange dashed line depicts perfect linearity. d Conductance relaxation after 50 pulses are delivered to mBLAST to bring the device to minimum and maximum conductance. e Conductance over time with 5 pulses delivered at a one second period. f Average change in conductance as a function of temperature in Celsius.

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