Fig. 1: Device fabrication process and characterizations.
From: CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area
a Schematics of the fabrication steps for the CNTB-M/CNTT vdWI device (1 × 1 CNT array). The inset image in (ii) and (iii) shows the schematics of the molecule assembly on CNTB. b The Raman mapping corresponding to each step in (a), where the G-band (1590 cm−1) peaks are observed at a laser wavelength of 532 nm. c The SEM images for the CNTB-M/CNTT vdWI device in (a, b (iii)). d AFM image of the CNTB-M/CNTT single cross-junction corresponding to (c). e Height profile distributions of CNTB (red curve), CNTB-M (black curve) and CNTT (blue curve) are plotted from the AFM function in (d).
