Fig. 2: Device structure and ferroelectric characteristics of the CNTB-M/CNTT vdWI.
From: CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area
a Three-dimensional view of the CNTB-M/CNTT vdWI. The layers (from bottom to top) are CNTB, molecule (M), and CNTT. b DFT simulation model of the molecule polarization change based on trans and cis isomers in CNTB-M/CNTT vdWI according to electrical switching. c Output characteristic (Ids-Vds) curves of CNTB-CNTT device (without molecule assembly). Forward (i, ii) and reverse (iii, iv) scans indicating no memory windows at Vds sweep ranges = ±10 V (negligible interface charge states at the interlayer interface of the vdWI). d Output characteristic (Ids-Vds) curves of CNTB-M/CNTT vdWI device (with molecule assembly). The switching of molecules between trans and cis states leads to the generation of a memory window. e Ferroelectric polarization versus bias for CNTB-CNTT (red curve) and CNTB-M/CNTT (blue curve). The measurements were conducted on the same device as in (c, d).
