Fig. 4: Memory function and microscale integration array of CNTB-M/CNTT vdWI.
From: CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area
a Electrical response of CNTB-M/CNTT vdWI memory that repeats writing, reading, erasing, and reading sequence by applying a drain voltage of −10 V, 1 V, + 10 V, and 1 V, respectively. The pulse width was 0.01 s. b Endurance and c retention characteristic of the CNTB-M/CNTT device. d Cross-staking of 4×4 aligned m-CNTs in CNTB-M/CNTT vdWI with color mapping of on/off ratios, respectively. Scale bar is 100 µm. e Statistical comparison of current density and active area reported for molecule junctions.
