Fig. 4: The electrical and thermal properties of Cu12Sb4S13 at different pressures.
a Pressure dependence of the electrical resistivity (ρ) at 290 K. The inset shows a zoomed ρ in the lower pressure region. b Pressure dependence of the lattice thermal conductivity (κL) and the electronic thermal conductivity (κe). The dash line is a theoretical minimum lattice thermal conductivity (κLmin) of Cu12Sb4S13. c The values of thermal conductivity at various pressures were determined by two different methods. The error bars are the uncertainties of the first-order temperature (laser power) derivatives of the phonon frequencies. The inset shows the diagram for the thermal conductivity measurements using in situ high-pressure Raman scattering method. The details of experimental methods are given in the Supplementary Methods. d Temperature-dependent electrical resistivity (ρ-T) at different pressures. The semiconductor-to-metal transition occurs during compression. The inset shows the optical images in reflection mode at 0 and 21.1 GPa.
