Fig. 1: Thermal conductance of Al/Si and Al/GaN interfaces.
From: Inelastic phonon transport across atomically sharp metal/semiconductor interfaces
a Thermal conductance of Al/Si Sample 1 (red spheres) and Sample 2 (blue spheres). Black dashed line is interface thermal conductance calculated by DMM. For comparison, we show previously measured Al/Si thermal conductance in open squares by Minnich39, triangle by Wilson40, and diamond by Jiang41. Yellow solid spheres are measured thermal conductance of Al/Si with a native oxide layer, compared with the results by Hopkins, shown in open circles14. b Thermal conductance of Al/GaN interface (red spheres). For comparison, the calculated thermal conductance using DMM (black dashed line) is plotted. Previous measurement results by Donovan42 are shown in open circles, the Al film of which was deposited by e-beam evaporation. Phonon dispersion relations of Al/Si (c) and Al/GaN (d) are calculated from first-principles. The calculation of error bars is detailed in Supplementary Information Note VIII.
