Fig. 5: Sensing performance with a large-scale flexible OFET array.
From: Light-responsive self-strained organic semiconductor for large flexible OFET sensing array
a Schematic diagram of an OFET array. b Layered structures of the OFET array from bottom to top: ITO-coated PET, 200 nm thick Al2O3 film, 100 nm AZO-BTBT-8 film, Au electrode, 100 nm thick HfO2 square array, and Au electrode. The inset shows the magnified structure of the top three layers in one pixel. c The front-view photograph of a complete 40-by-33 OFET array on a flexible substrate. The inset shows a magnified optical image of the array. d The detailed SEM image of an individual pixel. e–h Top-view photographs and corresponding current mappings of a smiling cartoon sun (garland) and words “Hi! Chem!” with an emoji (diaglyph). VDS = -15 V, VG = -15 V, UV = ultraviolet (λ = 365 nm, 100 μW cm–2), Vis = visible (λ ≥ 420 nm). The device array is prepared by continuous evaporation of AZO-BTBT-8, Au and HfO2 insulating layers by a set of aligned shadow masks without annealing.
