Fig. 5: Photocurrent of the CPL-detecting transistor with a tunneling oxide, and suggested hot electron transport mechanism depending on the gate voltage.
From: Circularly polarized light-sensitive, hot electron transistor with chiral plasmonic nanoparticles
a Photocurrent of the CPL-detecting transistor under 635 nm CPL illumination when the device has a tunneling HfO2 film of various thickness at the interface between the chiral gold nanoparticles and InGaZnO layer. b Corresponding photocurrent with respect to tunneling length, and fit to an exponential decay. c–e Hot electron migration schematics when the gate voltage is zero (c) and positive (e). Magnified energy band bending of the Schottky barrier depending on the gate voltage-dependent InGaZnO energy band bending of the CPL-detecting transistor (d).
