Fig. 4: Narrowband EQE modeling and mechanism study.

a Zero bias measured EQE spectra (solid lines) of ITO (135 nm)/PDIN(15 nm)/PCE10:COTIC-4F(180–500 nm)/MoO3 (15 nm)/Ag (100 nm) devices with various active layer thicknesses. The dash lines present the best EQE fits using TMM model. η here is 0.85, determined by scaling the calculated absorption in SCR to match the magnitude of the experimental EQE. b EQE spectra of a 500 nm thick PCE10: COTIC-4F inverted device with a PDIN interlayer under different reverse bias. Inset is the EQE change determined by EQE (bias)/EQE (0 V).