Fig. 2: Two-stage Fermi surface reconstruction in Ce3Bi4Pd3.
From: Control of electronic topology in a strongly correlated electron system
a Hall resistivity vs applied magnetic field at 0.5 K, together with the best fit according to the two-crossovers model (see Supplementary Note 7). The deviation of the data from linear behavior (shaded grey area) is due to a Berry curvature-derived anomalous Hall contribution (Ref. 11). b Same as (a) at 1.9 K. The Berry-curvature derived contribution is essentially absent at this temperature. The two characteristic fields \({B}_{1}^{*}\) and \({B}_{2}^{*}\) mark the positions of the crossovers between the different regimes. c The crossover fields \({B}_{1}^{*}(T)\) and \({B}_{2}^{*}(T)\) determined from the ρxy(B) fits are plotted as \({T}_{1}^{*}(B)\) and \({T}_{2}^{*}(B)\), respectively, in a temperature-magnetic field phase diagram. They extrapolate, in the zero-temperature limit, to Bc1 and Bc2 and separate three regimes of simple (linear-in-B) normal Hall resistivity. d Differential Hall coefficients \({\tilde{R}}_{0}\), \({\tilde{R}}_{1}\), and \({\tilde{R}}_{2}\) of these three regimes, determined from the ρxy(B) fits, as function of temperature. The lines are guides to the eyes. e Width of the first crossover FWHM1, representing the full width at half maximum of the second derivative of the two-crossovers fit function. The straight line is a pure power law fit, FWHM1 ∝ Tp, with p = 0.81. It describes the data down to the lowest temperature, evidencing that the carrier concentration changes abruptly at T = 0. f Same as in (e) for the second crossover. The straight full line is a pure power law fit, FWHM2 ∝ Tp, with p = 0.71 to the data above 1 K. At lower temperatures, the rate of decrease is somewhat reduced (red dashed line).
