Fig. 3: OECT device characterization of P(gTDPPT) and P(gTDPP2FT). | Nature Communications

Fig. 3: OECT device characterization of P(gTDPPT) and P(gTDPP2FT).

From: Switching p-type to high-performance n-type organic electrochemical transistors via doped state engineering

Fig. 3: OECT device characterization of P(gTDPPT) and P(gTDPP2FT).The alternative text for this image may have been generated using AI.

a, b Transfer characteristics and c, d output characteristics of P(gTDPPT) and P(gTDPP2FT). The dash lines are the curve of gm. e, f Transient on/off curves with VGS of 0~−0.9 and 0–0.9 V for P(gTDPPT) and P(gTDPP2FT), respectively. Device configuration: W/L = 100/10 μm, |VDS | = 0.6 V. g Voltage transfer characteristics and gain of the complementary inverter based on P(gTDPPT) and P(gTDPP2FT). Insert is the circuit diagram of the complementary inverter. Device configuration: W/L = 100/10 μm. Comparison of the h μC* and μ, and i τon and μ values of P(gTDPP2FT) with other reported n-type OECT materials25, 27,28,29,30,38,45.

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